Products
DEPOSITION TOOLSPlasma Enhanced Chemical Vapour Deposition (PECVD)Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)Atomic Layer Deposition (ALD)Ion Beam Deposition (IBD)ETCH TOOLSInductively Coupled Plasma Etching (ICP RIE)Reactive Ion Etching (RIE)Deep Silicon Etching (DSiE)Atomic Layer Etching (ALE)Ion Beam Etching (IBE)
Learning
Figure 1. Optical and SEM micrograph of the Fe/CuSn4 laminate.


where E is the Young’s modulus of the material, is the reduced modulus, and ν and νi are the Poisson’s ratio of the sample and the indenter tip material (Diamond - Ei = 1120 GPa, νi = 0.07), respectively. Using the Poisson’s ratios for each phase, we determined the Young’s modulus of each phase from the measured values - Table 1. Young’s moduli values for the Fe and CuSn4 phases are in agreement with literature values: ECuSn4 = 111 GPa [4] and EFe = 213 GPa [5].
where k is the Boltzmann constant, T is the absolute temperature, σf is the equivalent flow stress, H is the hardness, and V is the apparent activation volume for the plastic deformation.