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DEPOSITION TOOLSPlasma Enhanced Chemical Vapour Deposition (PECVD)Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)Atomic Layer Deposition (ALD)Ion Beam Deposition (IBD)ETCH TOOLSInductively Coupled Plasma Etching (ICP RIE)Reactive Ion Etching (RIE)Deep Silicon Etching (DSiE)Atomic Layer Etching (ALE)Ion Beam Etching (IBE)
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Figure 1. Schematic illustration of the advantage of high-throughput, combinatorial testing of single samples with compositional gradients versus conventional serial testing of large numbers of individual compositions.
so that with only three elements, where the composition of each element can vary by 1%, is 5,151.
Figure 2. Schematic and photograph of diffusion multiple samples with junction of interest circled in red.
Figure 3. High-speed nanoindentation property maps of the investigated triple junction region: (a) hardness, (b) reduced modulus, and (c) H/Er.
Figure 4. Quantitative alloy composition maps of the investigated ternary junction region.
Figure 5. Ternary phase and mechanical property maps assembled from Correlative Mechanical Microscopy of the superalloy triple junction with precipitation phase regions marked with dashed lines (χ phase in blue, carbides in red).