Overcoming Interface Challenges in WBG Power Devices

OI Academy | Webinar
From Innovation to Integration: Overcoming Interface Challenges in WBG Power Devices

Timezone: 12:30 IST | 15:00 SGT/TST | 16:00 JST/KST | 17:00 AEST

The webinar will be conducted in English with real-time translation and captioning in English, Traditional Chinese, Japanese, and Korean, at an APAC-friendly time.

Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are reshaping the future of power electronics, enabling higher efficiency, greater reliability, and operation under extreme conditions. As demand accelerates across electric vehicles, renewable energy, data centers, and industrial infrastructure, interface engineering and advanced plasma processing have become critical enablers of commercial success.

In this webinar, experts from industry and academia will share insights from recent collaborative research, highlighting how atomic-scale plasma techniques such as atomic layer deposition (ALD), atomic layer etching (ALE), and advanced surface pretreatments are addressing key challenges in SiC and GaN device fabrication. Attendees will gain practical perspectives on improving interface quality, enhancing device performance and reliability, and scaling advanced processes for high-volume manufacturing.

This Webinar Will Explore:

• How SiC and GaN enable high-efficiency power electronics across transport, energy, and industry
• Key interface, reliability, and yield challenges in WBG device fabrication
• High-volume ALD and ALE solutions for GaN power and RF manufacturing
• Scalable plasma processes for commercially viable SiC power devices
• Surface engineering strategies to improve device performance and lifetime
• Advanced characterisation techniques, including EBSD and AFM, for process optimisation