Dr Uwe Schroeder and Dr Harm Knoops will discuss the ALD of ferroelectric HfO2 for novel memory applications and the tuning properties of TiO2 and HfO2 by substrate biasing during Plasma ALD.
Watch on demandDr Harm Knoops is the Atomic Scale Segment Specialist at Oxford Instruments Plasma Technology and holds a part-time assistant p...
Daniel obtained his PhD in Physics from the University of Regensburg in 2009. In the same year, he joined AMO GmbH and become t...