Transition metal dichalcogenides (TMDs) belong to a new class of single or few-layer nanomaterials with great potential for optoelectronic device applications. The electronic, optical and thermal properties of TMDs differ significantly from those of their respective bulk precursors and can be tuned by varying characteristics such as the number of layers, chemical composition, crystal symmetry, strain and growth defects. For a comprehensive analysis of TMDs, it is beneficial to combine several microscopy techniques in order to obtain information about every one of these properties.
This webinar presents a comprehensive study of tungsten disulfide (WS2) crystals using various imaging techniques, including Raman and photoluminescence (PL) imaging, atomic force microscopy (AFM), scanning electron microscopy (SEM) and second harmonic generation (SHG) microscopy. Using correlative systems, the same sample area can be imaged with several techniques and the complementary information can be linked. Thus, TMDs can be characterized in terms of crystal symmetry, defects, strain, morphology and topography. Different growth mechanisms can be distinguished and edge effects can be investigated.