Thomas Beechem is an Associate Professor in Purdue
University’s School of Mechanical Engineering, with a courtesy appointment in
the School of Materials Engineering. His research uses optical spectroscopy,
nanoscale thermal measurements, and physical modeling to identify the material
mechanisms governing semiconductor-device behavior and reliability. His group’s
work spans Raman and infrared spectroscopy, nanoscale energy transport,
infrared nanophotonics, ferroelectric materials, two-dimensional electronics,
wide-bandgap semiconductors, and heterogeneous integration.
Before joining Purdue in 2021, Beechem spent twelve
years as a scientist at Sandia National Laboratories, where he advanced methods
in infrared nanophotonics, thermal metrology, and semiconductor materials
characterization. At Purdue, he has established spectroscopy-driven research
programs that connect local measurements of defects, strain, interfaces, and
energy transport to the electrical and thermomechanical behavior of devices.
Beechem is a Fellow of the American Society of Mechanical Engineers. He has
served as an associate editor for the ASME Journal of Heat Transfer
and the Journal of Applied Physics. His recognitions at Purdue include
the Robert W. Fox Outstanding Instructor Award and the College of Engineering
Faculty Excellence Award in Early Career Research.
The electronics enterprise remains defined by a familiar imperative: do more, do it faster, and do it within a smaller footprint. Big data, artificial intelligence, and cloud computing all depend on continued advances in hardware to sustain this trajectory. Yet limits rooted in both fundamental physics and long-standing computing architectures make future gains increasingly difficult to achieve through incremental improvement alone. Realizing the next generation of hardware will require more revolutionary approaches, including new materials, new packages, and new methods to assess their performance, reliability, and failure.
Motivated by this need, this talk will describe how Raman spectroscopy, together with complementary photoluminescence measurements, can be used to characterize semiconductor processing, stress, and reliability for applications ranging from frontier logic to packaging. First, Raman and photoluminescence spectroscopy will be used to examine how seed-layer engineering alters the disorder, charge state, and resulting performance of two-dimensional transition-metal dichalcogenide transistors. Second, spatially resolved Raman measurements of stress in silicon will reveal the mechanisms governing the thermomechanical response of scaled through-silicon vias used in 3D heterogeneously integrated packages. Finally, in operando optical measurements of ferroelectric AlBN capacitors will be shown to identify the formation of nitrogen-vacancy defects during electrical cycling and connect their emergence to device fatigue.
Taken together, these results illustrate how Raman spectroscopy can move beyond material identification to provide the mechanistic feedback needed to accelerate the development of emerging semiconductor materials, processes, and devices.