Zareena Hassanbee - will present the research conducted by Katarzyna Stokeley, the Oxford Instruments Plasma Technology Applications Development Team Leader.

Ms Zareena Hassanbee is an Application Engineer with the Etch Development Team at Oxford Instruments Plasma Technology. She holds a master’s degree in VLSI and Embedded Systems from Reva University. Her expertise lies in the study and enhancement of Silicon Carbide (SiC) surface quality using advanced plasma technology. Her work includes developing chamber clean recipes and process flow for processes such as Plasma Polish Dry Etch (PPDE), a patented non-destructive SiC surface smoothing technique by Oxford Instruments. Additionally, she is involved in projects focused on the removal of sub-surface damage on CMP SiC and the characterisation of these effects using Electron Backscatter Diffraction (EBSD).

Title: "EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces"
Data: 17 September 2025, 16:30 - 18:30, Session 17: Posters (WED)
Location: Exhibition Hall 1,1F, P28_321

For SiC devices to be epi ready, they require several preparation steps including mechanical and chemical mechanical polishing (CMP). However, this can lead to sub-surface defects that negatively impact device performance. Our applications development team, led by Katarzyna Stokeley, used electron backscatter diffraction (EBSD) to characterise multiple SiC samples that were treated with different plasma processes. This work not only reveals the variation in quality depending on CMP treatment, but it also highlights the importance of performing multiple characterisation techniques to ensure a comprehensive analysis of samples.