The International Conference on Silicon Carbide and Related Materials 2025 (ICSCRM) conference, which will focus on the latest advances in the field of silicon carbide (SiC) and other wide bandgap semiconductors, will be held from the 14th to the 19th of September in Busan, Korea.
The Oxford Instruments experts on silicon carbide and related topics look forward to meeting you at our booth no 9 to discuss:
If you would like to book a meeting with us at the show and discuss your current work and workflows, please complete the form below.
Find out more: ICSCRM 2025
Location
Bexco, Busan, Korea
Date
14-19 September 2025
Booth
9
Zareena Hassanbee - will present the research conducted by Katarzyna Stokeley, the Oxford Instruments Plasma Technology Applications Development Team Leader.
Ms Zareena Hassanbee is an Application Engineer with the Etch Development Team at Oxford Instruments Plasma Technology. She holds a master’s degree in VLSI and Embedded Systems from Reva University. Her expertise lies in the study and enhancement of Silicon Carbide (SiC) surface quality using advanced plasma technology. Her work includes developing chamber clean recipes and process flow for processes such as Plasma Polish Dry Etch (PPDE), a patented non-destructive SiC surface smoothing technique by Oxford Instruments. Additionally, she is involved in projects focused on the removal of sub-surface damage on CMP SiC and the characterisation of these effects using Electron Backscatter Diffraction (EBSD).
Title: "EBSD (Electron Backscatter Diffraction) as a non-destructive method of analysing sub-surface damage of plasma treated CMP SiC surfaces"
Data: 17 September 2025, 16:30 - 18:30
Location: Exhibition Hall 1.1F
For SiC devices to be epi ready, they require several preparation steps including mechanical and chemical mechanical polishing (CMP). However, this can lead to sub-surface defects that negatively impact device performance. Our applications development team, led by Katarzyna Stokeley, used electron backscatter diffraction (EBSD) to characterise multiple SiC samples that were treated with different plasma processes. This work not only reveals the variation in quality depending on CMP treatment, but it also highlights the importance of performing multiple characterisation techniques to ensure a comprehensive analysis of samples.
Dr Vishal Shah - an Associate Professor at the School of Engineering at the University of Warwick, UK.
Title: "A Toolbox For Trench Filling Epitaxy for SiC Superjunctions"
Data and location: Thursday, 18 September, 09:45-11:30, Session 19A | Epitaxial Growth 1 | Auditorium
Mustafa Akif Yildirim - PHD Student University of Warwick, UK.
Title: "Enhancing SiO2/4H-SiC Interface Quality via In-Situ Plasma Pretreatment and Post-Deposition Annealing for Improved MOS Device Performance"
Data and location: Friday, 19 September, 10:30-12:00Session 23A | Interface Processing | Convention Hall A+B, 1F
Dr Arne Benjamin Renz - an Assistant Professor at the School of Engineering at the University of Warwick, UK.
Title: "On the process optimization of ALD-deposition of SiO2 for SiC MOS processes"
Data and location: tbc
Mustafa Akif Yildirim - PHD Student University of Warwick, UK.
Title: "Surface engineering of the 4H-SiC SiO2/SiC interface by combining atomic layer deposition and atomic layer etching"
Data and location: tbc
Title: Impact of Post-Deposition Annealing on the Interface and Electrical Properties of ALD-Deposited SiO2 and HfO2/SiO2 Gate Stacks on 4H-SiC MOS Devices.
Data and location: tbc
Title: "Characterization of SiO2/4H-SiC systems using time-of-flight elastic recoil detection analysis"
Data and location: tbc
Visit ICSCRM 2025 Program.
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