Send Us Your SiC Wafer and We Will Show You the Value

Plasma Polish is a cost-effective, scalable, and device-validated dry etch alternative to Chemical Mechanical Polishing (CMP), for preparing SiC substrates and epi layers. It uniquely eliminates subsurface damage, to achieve high-performing and high-yielding power devices.

Key advantages of SiC Plasma Polish:

• Lower OPEX with reduced consumable usage
• Low environmental impact with drastically lower water usage
• Easily scalable for 200 mm substrate production
• Move dry polishing processes into fab and further optimize process controls

Complete the form below to submit your interest if you like to experience the contactless SiC plasma polishing solution and the high wafer-to-wafer process stability. We will contact you for more details and provide the address for the sample delivery. Please reach out to esea.marketing@oxinst.com if you need any further assistance. We are here and committed to supporting your success.