The EuroNanoLab event will focus on key topics related to dry etching, including fundamental concepts, process simulation and modeling, plasma sources, and a range of applications. For more details, visit the EuroNanoLab's event webpage.
Oxford Instruments will be showcasing the latest advancements in our plasma etching systems and process solutions.
At the upcoming conference, our expert, Dr Owain Thomas, Head of Commercial Solutions, will be presenting on the subject outlined below, on Wednesday, the 27th of May, at 11:45 am.
During the “Flash presentations” session, one of our other experts will also deliver the talk about our advanced technologies and systems on Wednesday, the 27th of May, at 3:45 pm.
Our team looks forward to engaging with you and discussing how we can support your current applications and objectives.
If you wish to schedule a meeting with us at the event, kindly fill out the form below.
Location
Lisbon, Portugal
Date
26-29 May 2026
Booth Number
Oxford Instruments
Business
Plasma Technology
Talk's title: Oxford Instruments plasma etching: from controlled ALE to low damage InP etch - advanced research and development to high volume manufacturing.
Date: 27 May 2026 (Wednesday)
Time: 11:45 am
This presentation details advanced plasma processing strategies for next-generation optoelectronic and quantum devices, focusing on atomic-layer control and high-throughput etching.
First, we explore atomic-scale precision through the development of emerging Controlled Atomic Layer Etching (ALE) processes. We specifically present a novel ALE mechanism for lithium niobate (LiNbO3), demonstrating sequential, self-limiting surface reactions that achieve monolayer removal sensitivity while eliminating the physical damage common in conventional reactive ion etching.
Second, the talk addresses 3D integration for quantum computing by detailing the Fabrication and Characterisation of Superconducting Through-Silicon Vias (TSVs). We demonstrate how combining plasma-polished TSV sidewalls with conformal Atomic Layer Deposition (ALD) of niobium nitride (NbN) optimises film crystallinity and material interfaces, ultimately achieving a high superconducting critical temperature (Tc) inside high-aspect-ratio geometries.
Finally, we transition to High-Volume Manufacturing (HVM) processing of Gallium Arsenide (GaAs) and Indium Phosphide (InP) devices. This segment focuses on high-rate, highly selective dry-etching processes developed for GaAs-based Vertical-Cavity Surface-Emitting Lasers (VCSELs) and InP-based Distributed Feedback (DFB) lasers, addressing critical industrial requirements for profile control, smooth sidewalls, and wafer-scale uniformity.
Dr Owain Thomas - A PhD and a first-class honours science graduate who has more than 20 years of experience within an international semiconductor business environment gained through top quality, innovative work coupled with a highly motivated approach and strong interpersonal and management skills.
Currently working at Oxford Instruments Plasma Technology as the Head of Commercial Solutions responsible in delivering multimillion-pound equipment for the semiconductor market. Managing a highly skilled team and a part of the senior management team contributing key business decisions including drivers for improved productivity and business growth across the whole organisation.
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