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The AVS 26th International Conference on Atomic Layer Deposition (ALD 2026), which includes the 13th International Atomic Layer Etching Workshop (ALE 2026), will concentrate on the advancements and applications of atomic layer controlled deposition techniques for thin films and the process of atomic layer etching.
It is a pleasure to announce that at the upcoming conference, our Applications Engineer, Dr Ben Jones, will deliver a talk on the subject outlined below.
The Oxford Instruments Plasma Technology team looks forward to welcoming you to the event at our booth to discuss your current projects and workflows. If you would like to schedule a meeting with us during the event, please complete the form below.
For further information, visit the AVS ALD/ALE 2026 website and check the AVS ALD/ALE Program 2026.
Location
Tampa, Florida | US
Date
June 28 - July 1 2026
Booth
TBC
Business
Plasma Technology
Title: Examining AlGaN Atomic Layer Etch per Cycle Uniformity and Repeatability by Cross-Referencing In-Situ Etch Depth Monitoring with Electrical Characterisation
Date: Tuesday, June 30, 2026, 2:30 - 2:45 PM
Session: Session: ALE1-TuA: Plasma and Energy-enhanced ALE II
ALE can provide a critical processing step during the fabrication of AlGaN gate-recessed normally-off HEMT devices. The 2DEG layer which forms in AlGaN-GaN HEMTs at the material interface is key to enable the mobility and carrier density required for high–performance power devices. Precise control of the AlGaN gate–recess thickness is essential for engineering threshold voltage (VTH) and blocking capability of the HEMT, ideally ~5 nm thickness. The application of ALE used in conjunction with the Etchpoint end-pointing technique highlights the highly controlled, low damage processing capabilities of the PlasmaPro 100 Cobra system. By providing in situ film thickness measurement, processing can be precisely controlled to achieve ideal film thickness. Furthermore, post-processing sheet resistance has been extracted to correlate process uniformity with AlGaN-GaN 2DEG electrical properties.
Dr Ben Jones is an Applications Engineer at Oxford Instruments Plasma Technology, specialising in atomic layer etch (ALE) process development and optimisation. His recent work focuses on ALE of GaN and AlGaN for gate‑recessed, normally‑off HEMT device fabrication.
He previously worked on advanced plasma etch processes for next‑generation 4H‑SiC power electronics, including geometrically optimised trench MOSFET gate formation and analytical device modelling that demonstrated the critical role of effective gate‑dielectric protection.
His research interests include future semiconductor power device architectures, plasma etching of wide‑bandgap and compound semiconductors, and the integration of ALE techniques into emerging device manufacturing flows.
© Oxford Instruments 2026
