The AVS 26th International Conference on Atomic Layer Deposition (ALD 2026), which includes the 13th International Atomic Layer Etching Workshop (ALE 2026), will concentrate on the advancements and applications of atomic layer controlled deposition techniques for thin films and the process of atomic layer etching.
The Oxford Instruments Plasma Technology team looks forward to welcoming you to the event at our booth to discuss your current projects and workflows. If you would like to schedule a meeting with us during the event, please complete the form below.
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For further information, visit the AVS ALD/ALE 2026 website and check the AVS ALD/ALE Program 2026.
Location
Tampa, Florida | US
Date
June 28 - July 1 2026
Booth
TBC
Business
Plasma Technology
Title: Superconducting Nitrides by Fast Remote Plasma ALD for Quantum Applications
Date: Monday, June 29 2026, 4:45 - 5:00 PM
Session: AA-MoA: Quantum ALD Applications, Room Ybor Salons I-IV
Superconducting thin films are foundational to today’s quantum devices, and improving their quality and scalability is key to unlocking real‑world quantum applications. In this work, we show how plasma‑enhanced atomic layer deposition (PEALD) enables wafer‑scale, high‑quality superconducting nitride films with atomic‑level thickness control and excellent interfaces using Oxford Instrument’s PlasmaPro ASP system.
High‑throughput PEALD of TiN, NbN, NbTiN, and Ta‑based films from 5 to 100 nm are demonstrated and achieve deposition rates above 50 nm/hour. By leveraging substrate biasing, film properties can be precisely tuned for low‑loss quantum circuits, detectors, and advanced 3D structures. These results highlight PEALD as a powerful and scalable platform for next‑generation quantum device fabrication.
Dr Harm C.M. Knoops is the Atomic Scale Segment expert at Oxford Instruments Plasma Technology and holds a part-time assistant professorship position at the Eindhoven University of Technology. His work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD, plasma ALE and growth of 2D materials. His main goals are to improve and advance atomic scale processes and applications for Oxford Instruments and its customers.
Title: Examining AlGaN Atomic Layer Etch per Cycle Uniformity and Repeatability by Cross-Referencing In-Situ Etch Depth Monitoring with Electrical Characterisation
Date: Tuesday, June 30, 2026, 2:30 - 2:45 PM
Session: ALE1-TuA: Plasma and Energy-enhanced ALE II, Room Tampa Bay Salons 3-4
ALE can provide a critical processing step during the fabrication of AlGaN gate-recessed normally-off HEMT devices. The 2DEG layer which forms in AlGaN-GaN HEMTs at the material interface is key to enable the mobility and carrier density required for high–performance power devices. Precise control of the AlGaN gate–recess thickness is essential for engineering threshold voltage (VTH) and blocking capability of the HEMT, ideally ~5 nm thickness. The application of ALE used in conjunction with the Etchpoint end-pointing technique highlights the highly controlled, low damage processing capabilities of the PlasmaPro 100 Cobra system. By providing in situ film thickness measurement, processing can be precisely controlled to achieve ideal film thickness. Furthermore, post-processing sheet resistance has been extracted to correlate process uniformity with AlGaN-GaN 2DEG electrical properties.
Dr Ben Jones is an Applications Engineer at Oxford Instruments Plasma Technology, specialising in atomic layer etch (ALE) process development and optimisation. His recent work focuses on ALE of GaN and AlGaN for gate‑recessed, normally‑off HEMT device fabrication.
He previously worked on advanced plasma etch processes for next‑generation 4H‑SiC power electronics, including geometrically optimised trench MOSFET gate formation and analytical device modelling that demonstrated the critical role of effective gate‑dielectric protection.
His research interests include future semiconductor power device architectures, plasma etching of wide‑bandgap and compound semiconductors, and the integration of ALE techniques into emerging device manufacturing flows.
Title: Growth of Superconducting Trilayer NbN/AlN/NbN Structures for Photonics and Quantum Computing Applications
Date: Monday, June 29 2026, 5:15 - 5:30 PM
Session: AA-MoA: Quantum ALD Applications, Room Ybor Salons I-IV
Title: High Rate, Tuneable Dielectric Nitrides by Plasma Atomic Layer Deposition Enabling Volume Manufacturing for Gan Device Integration
Date: tbc
Gallium nitride (GaN) is transforming power electronics, RF, microLED, and VCSEL markets as demand grows for smaller, faster, and more efficient devices. To support this rapid expansion, Oxford Instruments has developed high‑throughput, low‑damage PEALD processes for AlN and SiN optimised for 200 mm wafers, enabling superior uniformity, conformality, and device performance. Using a patented remote CCP source in the Atomfab ALD system, up to 8 times higher AlN deposition rates than ICP have been achieved while maintaining excellent film composition, low impurity levels, and strong dielectric properties. With optimised surface treatments and low‑temperature operation, these processes deliver production‑ready passivation and interface engineering solutions, achieving 10 - 11 wafers per hour and accelerating the scalable manufacturing of next‑generation GaN technologies.
Dr Arpita Saha studied a Bachelor's and Master’s degree in Nanotechnology in India, and then went on to study a PhD in Materials Chemistry from the Materials Science Institute of Barcelona. After completing her PhD, Arpita moved to Helsinki, Finland, and worked at ASM Microchemistry for 3 years as Senior Process Engineer for ALD, then moved to Nexperia, Newport, UK, for over a year as Senior Staff Engineer for CVD. Arpita is the Deposition Solutions Manager (Applications Department) at Oxford Instruments Plasma Technology, responsible for process development on the PlasmaPro ASP and Atomfab ALD systems.
© Oxford Instruments 2026
