Title: Innovative Plasma Processing Solutions for High Volume Manufacturing of GaN devices
Date: TBC

This talk presents innovative plasma processing solutions enabling high-volume manufacturing of GaN devices. It highlights recent advances in plasma-enhanced atomic layer deposition (PEALD) of AlN and SiN, demonstrating high-throughput processing alongside improved film quality. Key results include low thickness non-uniformity and reduced impurity levels, particularly oxygen, carbon, and hydrogen, supporting improved device performance and manufacturability.

Dr Tania Hemakumara is a Senior Strategic Marketing Manager, with over seven years of experience in the GaN market. She focuses on the evolving role of GaN technologies across key applications and the adoption of plasma solutions for GaN device fabrication. Tania holds both a PhD and a BEng from the University of Glasgow, with a technical background focused on plasma processing and the characterisation of GaN devices.