Semiconductors are the materials from which the engines of the information age are built, and their advancement is
among the most vital endeavors in technology. The first step in their production generally involves crystal growth and
sectioning into thin wafers. The wafers are then altered using methods such as doping to give them specific electronic
properties. Access to the subtlest details of these chemical and structural modifications on the sub-micrometer scale
is crucial in new device development and final product quality control.
Raman microscopy is a powerful tool for semiconductor research that can non-destructively acquire high-resolution,
spatially resolved information to determine the chemical composition of a sample, visualize component distribution,
and characterize properties such as crystallinity, strain, stress or doping. This is particularly valuable for
compound semiconductors, which often consist of multiple elements and complex structures.
In this webinar we will introduce the principles of 3D Raman imaging, and the speaker will show in detail how to
access chemical imaging at the highest spatial and spectral resolution. The measurements will demonstrate how Raman
imaging can provide insights on stress, doping and topographic variation in a large-area wafer and on layered
semiconducting materials.
Please join us to learn about the fundamentals of enhanced 3D Raman and photoluminescence imaging at the highest
spectral and spatial resolution for semiconductor applications. You will see exciting demonstration measurements on
semiconducting materials, including compositional analysis, stress and strain characterization, depth profiling and
defect analysis.
About the speaker
Thomas Meyer studied Physics at the University of Leipzig, Germany and worked as research associate
focusing on Biophysics including nanoparticle-cell interactions and membrane physics. He is a Senior Application
Scientist for Raman microscopy at Oxford Instruments, with a special focus on semiconductor material applications.