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The all new 30mm² Si(Li) detector INCAPentaFET-x3
The INCAPentaFET-x3 is a powerful new Si(Li) detector, which has a 30mm² detecting crystal, with the same resolution as a traditional 10mm². Using INCAPentaFET-x3 you can achieve decreased time to results or better quality results in the same analysis time, with no compromise in resolution or analytical performance.
Standard Features
- Works on the widest range of applications from low energy and low counts to increased productivity and high counts.
- Collects up to x3 more data for the same beam current when compared to 10mm² Si(Li) or drift detector
- Or collects the same data in a 1/3 of the time
- Or collects the same data for a 1/3 of the beam current when compared to 10mm² Si(Li) or drift detector
- The ability to work at low beam currents reduces sample damage and contamination
- Excellent low energy performance for the lifetime of the detector
- Guaranteed resolution on your microscope and at a more realistic count rate of 4,000cps
- Guaranteed <1eV shift in peak position and resolution between count rates of 1Kcps and 10Kcps
- Especially suited to FEGSEM
- Detection of elements down to Be
- Performance promises are guaranteed and tested on installation in line with ISO15632:2002
- Patented conditioning circuit, that removes crystal contamination ensuring optimum performance at all times
- All new Si(Li) detector combined with the uniquely stable INCAx-stream pulse processor to ensure you get the same results at 10,000cps as you do at 1,000cps
Applications
The large solid angle sensor in the INCAPentaFET-x3 makes it ideal suited to:
- Productive analysis at normal beam currents
- Low kV analysis
- Low probe currents
- Nanostructures
- Biological samples
- Light element analysis
- Beam sensitive samples
- Samples containing water or other volatile elements
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Product finder
Sales & Service Contacts
Downloads and Links
- INCAPentaFET-x3 Brochure
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