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Plasmalab®System400 magnetron sputtering process tool for physical vapour deposition (PVD)
The PlasmalabSystem400 offers the flexibility of dc, pulsed dc, rf and reactive magnetron sputtering for batch or single-wafer PVD processing in production or research & development
Flexible volume throughput
- Capable of taking 8 wafers of 50, 75 or 100 mm (2, 3 or 4 inch), or 4 wafers of 150 or 200 mm (6 or 8 inch)
- Range of wafer handling options:
- Single-wafer loadlock
- Cassette loading
- Clustered cassette-to-cassette via robotic wafer transfer
Clustering tools avoids oxidation and particle contamination as there is no exposure of the wafer to air between steps. It also improves yield and throughput as it reduces handling damage and transfer times. The PlasmalabSystem400 magnetron sputter tool may be clustered with other Oxford Instruments process tools, for example:
- Etch processes - RIE or ICP (PlasmalabSystem100, PlasmalabSystem133)
- Deposition - PECVD, ICP-CVD (PlasmalabSystem100, PlasmalabSystem133) or atomic layer deposition (ALD) (FlexAL®)
Full range of materials
- Ability to sputter metals and oxides with film thicknesses from 20 nm up to several µm
- Suitable for full range of sputtered metals – from Al to Zr
- Flexibility in processes and materials is enabled by the wide temperature range of the wafer table, with both water-cooling and heating up to 300 °C
- rf bias allows plasma-assisted deposition for lower temperatures, greater adhesion and more flexibility in substrate material
- Deposit multiple materials in one chamber in a single process
- The PlasmalabSystem400 may be configured either with 4 x 200 mm or 6 x 100 mm rf and/or dc magnetrons. The single process chamber is divided into 4 or 6 sub-chambers, isolating the sources from each other without the high cost of clustering several single process chambers
- Multi-layer processes are automated by process recipes in the PC2000TM process tool software, with its intuitive graphical interface and flexible user options
Optimum process uniformity and stability
- Wafer table may be operated in either static or rotating mode
- Uniformity masks can be fitted to further enhance uniformity, or removed for high-rate processes
- rf bias offers plasma pre-cleaning
- Loadlocked wafer entry minimises particle contamination
- Optional cryo pump for moisture-sensitive applications
- Typical uniformity
- ± 3% (100 mm)
- ± 4% (125 mm)
- ± 5% (150 mm)
PlasmalabSystem400 dc/rf magnetron sputter tool
Images with cooperation of the Optoelectronics Research Centre, University of Southampton, UK
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Downloads and Links
- PlasmalabSystem100Pro Brochure
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- Plasmalabsystem400 Brochure
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Related Information
- About atomic layer deposition (ALD)
- Plasma atomic layer deposition (ALD) and its benefits
- Global Customer Support & Service - Oxford Instruments Plasma Technology
- Deposition and growth
- Etching
- Etching, deposition and growth
- High brightness LEDs (HB LEDs)
- Molecular beam epitaxy (MBE)
- Nanostructure growth
- Technologies and Devices International (TDI)
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