Please click here if you would like additional information
Global Customer Support & Service
Oxford Instruments is committed to supporting our customers around the world, with a range of support agreements, service options and training to meet your needs. More >>
Plasma ALD and its benefits
Why plasma ALD?
Plasma atomic layer deposition (often referred to as "plasma-enhanced" ALD - PEALD - or "plasma-assisted" ALD - PAALD) offers a number of advantages compared to conventional "thermal" ALD:
- Widest choice of precursor chemistry available
- Low temperature processes, down to room temperature
- Eliminates the need for water as a precursor, purge times between ALD cycles and therefore reducing overall process time
- Higher quality films through improved removal of impurities, leading to lower resistivity and higher density
- Ability to control and vary stoichiometry
- Higher deposition rates than thermal ALD
- Plasma surface treatment is possible
- Plasma cleaning of the process chamber is possible for some materials, removing or reducing the need for physical and/or chemical cleaning
Why remote plasma ALD?
Plasma ALD operates as either a direct plasma, in close proximity to the wafer/substrate, or as a remote plasma removed from the substrate. In remote plasma ALD:
- Lower plasma damage is obtained
- More radical species are created
- Higher plasma density can be used
- Isolation of the plasma source prevents deposition of conductive and insulating coatings and coating in thermal ALD mode
- Remote plasma ALD allows for greater process flexibility; for example, inductively coupled plasma (ICP) sources are extremely effective at dissociating hydrogen for use in metal ALD
Product finder
Process News
Read about what's new in etching, deposition and growth More >>
Related Information
Downloads and Links
- FlexAL® atomic layer deposition brochure
(1,824Kb)
- Oxford Instruments poster from AVS ALD2006
(631Kb)
- PlasmalabSystem100Pro Brochure
(1,598Kb)