High brightness LEDs

High brightness LEDs (HB LEDs)

Oxford Instruments offers a unique family of etch and deposition process solutions for high and ultra-high brightness LED (HB LED) production, assuring the highest possible throughput with the highest possible yield at key points in the production process.

Industry-leading capability

Our tools and processes offer:

• highest batch throughput
• excellent in-wafer uniformity
• excellent wafer-to-wafer uniformity
• excellent run-to-run uniformity

for processes in high brightness LED production, including:

• substrate etching of sapphire, SiC, GaN
• hard mask deposition (PECVD) and etch of SiO₂ and SiN_x
• etching of GaN, AlGaN, AlGaInP and related materials for device structures
• device isolation etch
• passivation deposition (PECVD)

Etch processes offer both reactive ion etching (RIE) and inductively coupled plasma (ICP) etch, with both hard mask and photoresist (PR) processes.